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| Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.50.2 Features High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : P = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package 3.90.25 4.50.15 3.50.15 2.10.15 1.60.15 0.80.1 12.8 min. (2.95) 2-1.20.3 2-0.450.15 0.450.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.5 3 -25 to +85 - 40 to +100 Unit mW mA A V C C 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO P VF IR Ct tr tf Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3 typ 6 940 50 1.3 45 1 1 80 max Unit mW nm nm 1.6 10 V A pF s s deg. 1 Infrared Light Emitting Diodes LNA2603F IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 4 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (mA) Pulse forward current 10 -1 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 1 10 2 60 10 -1 10 40 20 10 -2 1 0 - 25 0 20 40 60 80 100 10 -3 10 -2 10 -1 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 IF = 100mA PO -- Ta IF = 50mA Relative radiant power PO VF (V) 10 2 1.2 50mA 1mA 0.8 Forward voltage 10 (1) Relative radiant power PO 1 1 (2) 0.4 10 -1 10 -2 1 10 10 2 10 3 10 4 0 - 40 0 40 80 120 10 -1 - 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 30 40 Peak emission wavelength P (nm) Relative radiant intensity(%) Relative radiant intensity (%) 980 80 80 60 40 50 60 70 80 90 100 110 120 960 60 20 940 40 920 20 130 140 900 940 980 1020 1060 1100 900 - 40 0 40 80 120 0 860 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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